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N5266 TMP47C 3X216 TBB505B W4093BN SA18A 7284R10K E4284
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3250
DESCRIPTION *With TO-220 package *High VCEO *Large PC APPLICATIONS *For TV video output amplifier applications PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.1 0.2 15 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=0.1mA ;IB=0 IC=0.1mA ;IE=0 IE=0.1mA ;IC=0 IC=50mA ;IB=5mA IC=30mA ; VCE=10V IC=5mA ; VCE=50V IC=30mA ; VCE=10V IE=0; VCB=30V,f=1MHz IE=-20mA ; VCB=30V 70 50 30 MIN 300 300 7
2SC3250
TYP.
MAX
UNIT V V V
1.5 1.2 250
V V
5.0 100
pF MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3250
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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